Konig, J. D., Winkler, M., Buller, S., Bensch, W., Schurmann, U., Kienle, L. and Bottner, H. (2011) Bi(2)Te(3)-Sb(2)Te(3) Superlattices Grown by Nanoalloying. Journal of Electronic Materials, 40 (5). pp. 1266-1270. DOI 10.1007/s11664-011-1578-0.

Abstract

In this work, Bi(2)Te(3)-Sb(2)Te(3) superlattices were prepared by the nanoalloying approach. Very thin layers of Bi, Sb, and Te were deposited on cold substrates, rebuilding the crystal structure of V(2)VI(3) compounds. Nanoalloyed super- lattices consisting of alternating Bi(2)Te(3) and Sb(2)Te(3) layers were grown with a thickness of 9 nm for the individual layers. The as-grown layers were annealed under different conditions to optimize the thermoelectric parameters. The obtained layers were investigated in their as-grown and annealed states using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive x-ray (EDX) spectroscopy, transmission electron microscopy (TEM), and electrical measurements. A lower limit of the elemental layer thickness was found to have c-orientation. Pure nanoalloyed Sb(2)Te(3) layers were p-type as expected; however, it was impossible to synthesize p-type Bi(2)Te(3) layers. Hence the Bi(2)Te(3)-Sb(2)Te(3) superlattices consisting of alternating n- and p-type layers showed poor thermoelectric properties.

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