On the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition.

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Quiroga-Gonzalez, E., Bensch, W., Aceves-Mijares, M., Yu, Z., Lopez-Estopier, R. and Monfil-Leyva, K. (2011) On the photoluminescence of multilayer arrays of silicon rich oxide with high silicon content prepared by low pressure chemical vapor deposition. Thin Solid Films, 519 (22). pp. 8030-8036. DOI 10.1016/j.tsf.2011.06.020.

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Abstract

The photoluminescence emission of multilayer structures composed of layers of silicon rich oxide with high silicon content and layers of silicon rich oxide with low silicon content obtained by low pressure chemical vapor deposition is here presented. Different parameters for the preparation of the multilayers have been varied such as the Si concentration and the thicknesses of the layers. Additionally, the samples were oxidized at different temperatures. For all samples the photoluminescence seems to have the same origin: defects in the oxide matrix and defects at the interfaces between the Si nanocrystals. The structural and compositional properties of the multilayer structures are discussed. (C) 2011 Elsevier B.V. All rights reserved.

Document Type: Article
Keywords: Multilayers Silicon rich oxide Nanoparticles Photoluminescence Low-pressure chemical vapor deposition Transmission electron microscopy visible-light emission si nanocrystals ion-implantation films nanostructures luminescence superlattice interface oxidation layers
Research affiliation: Kiel University
Refereed: Yes
Date Deposited: 01 Nov 2012 05:06
Last Modified: 23 Jan 2013 10:01
URI: https://oceanrep.geomar.de/id/eprint/18380

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